MMBTA42LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

25

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Width :

1.397mm

Transistor Type :

NPN

Length :

3.0226mm

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

300V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

JESD-609 Code :

e3

Frequency :

50MHz

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

225mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

500mA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 10V

Base Part Number :

MMBTA42

Voltage - Rated DC :

300V

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

500mV

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

300V

Pbfree Code :

yes

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1

Factory Lead Time :

16 Weeks

Surface Mount :

yes

Weight :

4.535924g

Number of Pins :

3

Current Rating :

500mA

Gain Bandwidth Product :

50MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

300V

Power Dissipation :

300mW

Height :

1.016mm

Transition Frequency :

50MHz

Collector Base Voltage (VCBO) :

300V

Published :

1998