MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23
- Stock
- 41,001
- In Stock ：
- 41,001
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transition Frequency :
- 50MHz
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 19 Weeks
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Additional Feature :
- High Reliability
- Base Part Number :
- MMBTA42
- Voltage - Rated DC :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 25
- Series :
- Automotive, AEC-Q101
- Width :
- 1.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Continuous Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 300V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 300V
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.1mm
- Length :
- 3.05mm
- Max Power Dissipation :
- 300mW
- Published :
- 2008
- Termination :
- SMD/SMT
- Max Junction Temperature (Tj) :
- 150°C
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Current Rating :
- 200mA
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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