MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 46,951
- In Stock ：
- 46,951
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Transistor Type :
- NPN
- Length :
- 3.05mm
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Width :
- 1.4mm
- hFE Min :
- 25
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 50MHz
- Terminal Form :
- Gull wing
- Additional Feature :
- High Reliability
- Current Rating :
- 200mA
- Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- Collector Emitter Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 19 Weeks
- Transition Frequency :
- 50MHz
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 300V
- Number of Pins :
- 3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Base Part Number :
- MMBTA42
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 50MHz
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 300V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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