MMBTA14LT1G
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- Mfr.Part #
- MMBTA14LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23-3
- Stock
- 7,975
- In Stock ：
- 7,975
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 30V
- Current Rating :
- 300mA
- Weight :
- 1.437803g
- Transistor Application :
- AMPLIFIER
- Height :
- 940μm
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency - Transition :
- 125MHz
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.5V
- Continuous Collector Current :
- 300mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- MMBTA14
- hFE Min :
- 10000
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 300mA
- Transition Frequency :
- 125MHz
- Emitter Base Voltage (VEBO) :
- 10V
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2006
- Polarity :
- NPN
- Factory Lead Time :
- 11 Weeks
- Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Max Power Dissipation :
- 225mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 30V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Datasheets
- MMBTA14LT1G
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA14LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 300mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 300mA volts.
MMBTA14LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA14LT1G Applications
There are a lot of ON Semiconductor
MMBTA14LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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