MMBTA13LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Width :

1.4mm

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Frequency - Transition :

125MHz

Mounting Type :

Surface Mount

Height :

1.01mm

Transistor Element Material :

SILICON

Power Dissipation :

225mW

Max Collector Current :

300mA

Lead Free :

Lead Free

Terminal Form :

Gull wing

Transition Frequency :

125MHz

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

10V

Base Part Number :

MMBTA13

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

30V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

30V

Pin Count :

3

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Factory Lead Time :

11 Weeks

Surface Mount :

yes

Published :

2009

Max Power Dissipation :

225mW

Collector Emitter Saturation Voltage :

1.5V

Radiation Hardening :

No

Transistor Type :

NPN - Darlington

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Length :

3.04mm

Polarity :

NPN

Collector Base Voltage (VCBO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3