MMBTA13LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

30V

Polarity :

NPN

Emitter Base Voltage (VEBO) :

10V

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

30V

Pin Count :

3

Continuous Collector Current :

300mA

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Max Power Dissipation :

225mW

REACH SVHC :

No SVHC

Pbfree Code :

yes

Factory Lead Time :

11 Weeks

ECCN Code :

EAR99

Published :

1997

Base Part Number :

MMBTA13

Element Configuration :

Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Max Breakdown Voltage :

30V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Halogen Free :

Halogen Free

Max Collector Current :

300mA

Collector Emitter Voltage (VCEO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Length :

2.9mm

Power Dissipation :

225mW

Current - Collector Cutoff (Max) :

100nA ICBO

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Type :

NPN - Darlington

Voltage - Rated DC :

30V

Height :

940μm

Weight :

1.437803g

Number of Elements :

1

Transition Frequency :

125MHz

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

1.5V

Width :

1.3mm

Current Rating :

300mA

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Frequency - Transition :

125MHz

hFE Min :

5000