MMBTA06WT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2005

Factory Lead Time :

6 Weeks

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

ECCN Code :

EAR99

Max Breakdown Voltage :

80V

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

80V

Current Rating :

500mA

Max Power Dissipation :

150mW

Surface Mount :

yes

Voltage - Rated DC :

80V

Gain Bandwidth Product :

100MHz

Package / Case :

SC-70, SOT-323

Radiation Hardening :

No

Pin Count :

3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

80V

Length :

6.35mm

Current - Collector Cutoff (Max) :

100nA

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MMBTA06

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Weight :

4.535924g

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

4V

Collector Emitter Breakdown Voltage :

80V

Max Collector Current :

500mA

Terminal Finish :

Tin (Sn)

hFE Min :

100

Power Dissipation :

150mW

Height :

6.35mm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Frequency :

100MHz

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Width :

6.35mm

Lead Free :

Lead Free

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

250mV

Terminal Position :

Dual