MMBTA06LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

80V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Length :

3.0226mm

Max Power Dissipation :

225mW

Base Part Number :

MMBTA06

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

250mV

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Surface Mount :

yes

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Position :

Dual

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Pin Count :

3

Max Collector Current :

500mA

Voltage - Rated DC :

80V

REACH SVHC :

No SVHC

Number of Pins :

3

Current Rating :

500mA

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Gain Bandwidth Product :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Max Breakdown Voltage :

80V

hFE Min :

100

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Height :

1.016mm

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

80V

Frequency :

100MHz

Collector Base Voltage (VCBO) :

80V

Element Configuration :

Single

Published :

2005

Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

4V

Width :

1.397mm

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA

Operating Temperature :

-55°C~150°C TJ