MMBTA06LT1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Saturation Voltage :

250mV

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

80V

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA

Number of Elements :

1

hFE Min :

100

Frequency :

100MHz

Pbfree Code :

yes

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Radiation Hardening :

No

Voltage - Rated DC :

80V

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Base Part Number :

MMBTA06

Length :

3.0226mm

Collector Base Voltage (VCBO) :

80V

Max Breakdown Voltage :

80V

Transition Frequency :

100MHz

Max Power Dissipation :

225mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

300mW

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Surface Mount :

yes

Gain Bandwidth Product :

100MHz

Factory Lead Time :

4 Weeks

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

JESD-609 Code :

e3

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Lead Free :

Lead Free

Width :

1.397mm

Emitter Base Voltage (VEBO) :

4V

Polarity/Channel Type :

NPN

Element Configuration :

Single

Transistor Type :

NPN

Height :

1.016mm

Max Collector Current :

500mA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current Rating :

500mA