MMBTA06LT1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA

Transition Frequency :

100MHz

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

hFE Min :

100

RoHS Status :

ROHS3 Compliant

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

250mV

Length :

3.0226mm

Max Power Dissipation :

225mW

Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Polarity/Channel Type :

NPN

Frequency :

100MHz

Height :

1.016mm

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

80V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-609 Code :

e3

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

4V

Current Rating :

500mA

Number of Pins :

3

Voltage - Rated DC :

80V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Base Part Number :

MMBTA06

Collector Base Voltage (VCBO) :

80V

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Width :

1.397mm

Pin Count :

3

Collector Emitter Voltage (VCEO) :

80V

Published :

2005

Gain Bandwidth Product :

100MHz

Terminal Position :

Dual