MMBTA06
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- Mfr.Part #
- MMBTA06
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 2,815
- In Stock ：
- 2,815
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Base Part Number :
- MMBTA06
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 80V
- Continuous Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- hFE Min :
- 100
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- Current Rating :
- 500mA
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Additional Feature :
- High Reliability
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 310mW
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Saturation Voltage :
- 250mV
- Transistor Type :
- NPN
- Width :
- 1.4mm
- Height :
- 1.1mm
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Length :
- 3.05mm
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 80V
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Datasheets
- MMBTA06
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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