MMBTA06
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- Mfr.Part #
- MMBTA06
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 8,725
- In Stock ：
- 8,725
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 80V
- Base Part Number :
- MMBTA06
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Continuous Collector Current :
- 500mA
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Power Dissipation :
- 310mW
- Pin Count :
- 3
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- High Reliability
- Published :
- 2009
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 4V
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Max Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- 500mA
- Height :
- 1.1mm
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Contact Plating :
- Tin
- Weight :
- 7.994566mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Length :
- 3.05mm
- hFE Min :
- 100
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBTA06
MMBTA06 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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