MMBTA06
- Mfr.Part #
- MMBTA06
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 8,725
- In Stock :
- 8,725
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Additional Feature :
- High Reliability
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Width :
- 1.4mm
- Base Part Number :
- MMBTA06
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Height :
- 1.1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- hFE Min :
- 100
- Factory Lead Time :
- 15 Weeks
- Series :
- Automotive, AEC-Q101
- Continuous Collector Current :
- 500mA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 310mW
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Published :
- 2009
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 80V
- Current Rating :
- 500mA
- Pin Count :
- 3
- Length :
- 3.05mm
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- MMBTA06

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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