MMBTA05LT3G
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- Mfr.Part #
- MMBTA05LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 10,255
- In Stock ：
- 10,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 4V
- Max Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 500mA
- Voltage - Rated DC :
- 60V
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.04mm
- Max Power Dissipation :
- 225mW
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Frequency :
- 100MHz
- Height :
- 1.11mm
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- hFE Min :
- 100
- Surface Mount :
- yes
- Base Part Number :
- MMBTA05
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Width :
- 2.64mm
- Datasheets
- MMBTA05LT3G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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