MMBTA05LT3
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- Mfr.Part #
- MMBTA05LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 42,396
- In Stock ：
- 42,396
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Current Rating :
- 500mA
- Width :
- 2.64mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.11mm
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 225mW
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- hFE Min :
- 100
- Number of Pins :
- 3
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 4V
- Length :
- 3.04mm
- Collector Base Voltage (VCBO) :
- 60V
- Base Part Number :
- MMBTA05
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Datasheets
- MMBTA05LT3
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA05LT3G Applications
There are a lot of ON Semiconductor
MMBTA05LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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