MMBTA05LT1G
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- Mfr.Part #
- MMBTA05LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 7,554
- In Stock ：
- 7,554
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Width :
- 2.64mm
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 250mV
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Published :
- 2005
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Power - Max :
- 225mW
- Base Part Number :
- MMBTA05
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 100
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Height :
- 1.11mm
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 225mW
- Length :
- 3.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 96.1A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Datasheets
- MMBTA05LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 96.1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor
MMBTA05LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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