MMBTA05-7
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- Mfr.Part #
- MMBTA05-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 48,591
- In Stock ：
- 48,591
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Current Rating :
- 100mA
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity :
- NPN
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 100MHz
- Current - Collector (Ic) (Max) :
- 500mA
- Supplier Device Package :
- SOT-23-3
- Max Power Dissipation :
- 300mW
- Min Operating Temperature :
- -55°C
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 3.05mm
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Power - Max :
- 300mW
- Continuous Collector Current :
- 500mA
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.4mm
- hFE Min :
- 100
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Height :
- 1mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 250mV
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 4V
- Base Part Number :
- MMBTA05
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Number of Elements :
- 1
- Weight :
- 200.998119mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Operating Temperature :
- 150°C
- Lead Free :
- Contains Lead
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Datasheets
- MMBTA05-7
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.This product comes in a SOT-23-3 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
the supplier device package of SOT-23-3
MMBTA05-7 Applications
There are a lot of Diodes Incorporated
MMBTA05-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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