MMBT8099LT1
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- Mfr.Part #
- MMBT8099LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 61,585
- In Stock ：
- 61,585
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Power Dissipation :
- 225mW
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 400mV
- Transistor Element Material :
- SILICON
- Length :
- 3.04mm
- hFE Min :
- 100
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 150MHz
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Height :
- 1.01mm
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 150MHz
- Published :
- 2006
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Width :
- 1.4mm
- Voltage - Rated DC :
- 80V
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 225mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Base Part Number :
- MMBT8099
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT8099LT1
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT8099LT1G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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