MMBT6520LT3
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- Mfr.Part #
- MMBT6520LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 31,886
- In Stock ：
- 31,886
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 40MHz
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Saturation Voltage :
- -1V
- HTS Code :
- 8541.21.00.95
- Current - Collector (Ic) (Max) :
- 500mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Peak Reflow Temperature (Cel) :
- 240
- Current Rating :
- -500mA
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Rated DC :
- -350V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 225mW
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -350V
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- hFE Min :
- 20
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Surface Mount :
- yes
- JESD-609 Code :
- e0
- Base Part Number :
- MMBT6520
- Gain Bandwidth Product :
- 200MHz
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Datasheets
- MMBT6520LT3
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6520LT3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT6520LT3 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT3 Applications
There are a lot of ON Semiconductor
MMBT6520LT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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