MMBT6520LT1G
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- Mfr.Part #
- MMBT6520LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 7,932
- In Stock ：
- 7,932
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 200MHz
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Length :
- 3.04mm
- Transition Frequency :
- 40MHz
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- hFE Min :
- 20
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 350V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Gain Bandwidth Product :
- 200MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 300mW
- Surface Mount :
- yes
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Max Breakdown Voltage :
- 350V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2004
- Power - Max :
- 225mW
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1.11mm
- Voltage - Rated DC :
- -350V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -1V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 350V
- Base Part Number :
- MMBT6520
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Width :
- 2.64mm
- Contact Plating :
- Tin
- Current Rating :
- -500mA
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MMBT6520LT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBT6520LT1G Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6520LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT1G Applications
There are a lot of ON Semiconductor
MMBT6520LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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