MMBT6517LT3G
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- Mfr.Part #
- MMBT6517LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.1A SOT23-3
- Stock
- 29,196
- In Stock ：
- 29,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 7 hours ago)
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 20
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 225mW
- Collector Base Voltage (VCBO) :
- 350V
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- Terminal Position :
- Dual
- Base Part Number :
- MMBT6517
- Voltage - Rated DC :
- 350V
- Pbfree Code :
- yes
- Transition Frequency :
- 40MHz
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 200MHz
- JESD-609 Code :
- e3
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 225mW
- Max Breakdown Voltage :
- 350V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Pin Count :
- 3
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 350V
- Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Datasheets
- MMBT6517LT3G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6517LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
MMBT6517LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3G Applications
There are a lot of ON Semiconductor
MMBT6517LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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