MMBT6429LT1G
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- Mfr.Part #
- MMBT6429LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A SOT23-3
- Stock
- 22,427
- In Stock ：
- 22,427
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 1.01mm
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 1.4mm
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 3.04mm
- Transistor Application :
- AMPLIFIER
- Weight :
- 4.535924g
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 700MHz
- Frequency :
- 700MHz
- Contact Plating :
- Tin
- hFE Min :
- 500
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 225mW
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 200mA
- Base Part Number :
- MMBT6429
- Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 55V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Collector Current :
- 200mA
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 100μA 5V
- Published :
- 2004
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 600mV
- Radiation Hardening :
- No
- Datasheets
- MMBT6429LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6429LT1G Overview
This device has a DC current gain of 500 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 200mA volts is possible.
MMBT6429LT1G Features
the DC current gain for this device is 500 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 100MHz
MMBT6429LT1G Applications
There are a lot of ON Semiconductor
MMBT6429LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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