MMBT6427LT1G
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- Mfr.Part #
- MMBT6427LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 0.5A SOT23-3
- Stock
- 13,424
- In Stock ：
- 13,424
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 130MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1μA
- Collector Emitter Voltage (VCEO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Polarity :
- NPN
- Surface Mount :
- yes
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 40V
- Halogen Free :
- Halogen Free
- Width :
- 1.4mm
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Power Dissipation :
- 225mW
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2006
- Height :
- 1.01mm
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Collector Emitter Saturation Voltage :
- 1.2V
- Continuous Collector Current :
- 500mA
- Current Rating :
- 600mA
- hFE Min :
- 10000
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Length :
- 3.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Pin Count :
- 3
- Voltage - Rated DC :
- 40V
- Factory Lead Time :
- 10 Weeks
- Termination :
- SMD/SMT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Lead Free :
- Lead Free
- Base Part Number :
- MMBT6427
- Weight :
- 4.535924g
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Max Power Dissipation :
- 225mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- MMBT6427LT1G
NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6427LT1G Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT6427LT1G Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 600mA
a transition frequency of 130MHz
MMBT6427LT1G Applications
There are a lot of ON Semiconductor
MMBT6427LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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