MMBT5962

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

39 Weeks

Collector Emitter Breakdown Voltage :

45V

Transistor Type :

NPN

Max Collector Current :

100mA

Length :

2.9mm

Collector Emitter Saturation Voltage :

200mV

Voltage - Rated DC :

45V

Base Part Number :

MMBT5962

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Transition Frequency :

100MHz

Radiation Hardening :

No

Number of Elements :

1

Width :

1.3mm

Lead Free :

Lead Free

Pbfree Code :

yes

Height :

930μm

Collector Emitter Voltage (VCEO) :

45V

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Max Power Dissipation :

350mW

Max Breakdown Voltage :

45V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Weight :

30mg

Current - Collector Cutoff (Max) :

2nA ICBO

Collector Base Voltage (VCBO) :

45V

ECCN Code :

EAR99

hFE Min :

600

Number of Pins :

3

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Terminal Position :

Dual

Mount :

Surface Mount

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

350mW

Current Rating :

100mA

JESD-609 Code :

e3

Published :

1997

Emitter Base Voltage (VEBO) :

8V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

600 @ 10mA 5V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

200mV @ 500μA, 10mA