MMBT589LT1G

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Mfr.Part #
MMBT589LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 30V 1A SOT23-3
Stock
2,815
In Stock :
2,815

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Max Power Dissipation :
310mW
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Collector Emitter Breakdown Voltage :
30V
Pin Count :
3
Current Rating :
-1A
Collector Base Voltage (VCBO) :
50V
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Surface Mount :
yes
hFE Min :
100
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Max Breakdown Voltage :
30V
ECCN Code :
EAR99
Transition Frequency :
100MHz
Collector Emitter Saturation Voltage :
-650mV
Published :
1998
Number of Elements :
1
Power Dissipation :
710mW
Frequency :
100MHz
Current - Collector Cutoff (Max) :
100nA
Number of Terminations :
3
Gain Bandwidth Product :
100MHz
Pbfree Code :
yes
Factory Lead Time :
8 Weeks
Voltage - Rated DC :
-30V
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
30V
Base Part Number :
MMBT589L
Power - Max :
310mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 2V
JESD-609 Code :
e3
Terminal Form :
Gull wing
Transistor Application :
SWITCHING
Polarity/Channel Type :
PNP
Contact Plating :
Tin
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
650mV @ 200mA, 2A
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
1A
Halogen Free :
Halogen Free
Terminal Position :
Dual
Lead Free :
Lead Free
Datasheets
MMBT589LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT589LT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Base Part Number:MMBT589L, Number of Pins:3, MMBT589LT1G pinout, MMBT589LT1G datasheet PDF, MMBT589LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT589LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT589LT1G


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT589LT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MMBT589LT1G Features


the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz


MMBT589LT1G Applications


There are a lot of ON Semiconductor
MMBT589LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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