MMBT5550

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

140V

JESD-609 Code :

e3

Pin Count :

3

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Number of Terminations :

3

Frequency - Transition :

50MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

600mA

Transistor Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Power - Max :

350mW

JESD-30 Code :

R-PDSO-G3

Pbfree Code :

yes

Surface Mount :

yes

Polarity/Channel Type :

NPN

Qualification Status :

COMMERCIAL

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Transition Frequency :

50MHz

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

JEDEC-95 Code :

TO-236AB

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Configuration :

Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)