MMBT5401-G

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Mfr.Part #
MMBT5401-G
Manufacturer
Comchip Technology
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 150V 0.6A SOT23-3
Stock
8,579
In Stock :
8,579

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Manufacturer :
Comchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
300mW
JESD-30 Code :
R-PDSO-G3
Continuous Collector Current :
-600mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency - Transition :
100MHz
Polarity/Channel Type :
PNP
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-236-3, SC-59, SOT-23-3
Mount :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Factory Lead Time :
10 Weeks
Power - Max :
300mW
Collector Emitter Voltage (VCEO) :
500mV
Packaging :
Tape and Reel (TR)
Transition Frequency :
100MHz
hFE Min :
80
Collector Emitter Breakdown Voltage :
150V
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 10mA 5V
Terminal Position :
Dual
Transistor Type :
PNP
Transistor Element Material :
SILICON
Element Configuration :
Single
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Emitter Base Voltage (VEBO) :
-5V
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Published :
2011
Weight :
200.998119mg
Max Collector Current :
600mA
Datasheets
MMBT5401-G
Introducing Transistors - Bipolar (BJT) - Single Comchip Technology MMBT5401-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, MMBT5401-G pinout, MMBT5401-G datasheet PDF, MMBT5401-G amp .Beyond Transistors - Bipolar (BJT) - Single Comchip Technology MMBT5401-G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Comchip Technology MMBT5401-G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT5401-G Overview


This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -600mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.

MMBT5401-G Features


the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz


MMBT5401-G Applications


There are a lot of Comchip Technology
MMBT5401-G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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