MMBT5089

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

350mW

Factory Lead Time :

39 Weeks

Width :

1.3mm

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Collector Emitter Breakdown Voltage :

25V

Max Frequency :

50MHz

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Lead Free :

Lead Free

Frequency - Transition :

50MHz

Base Part Number :

MMBT5089

Power Dissipation :

350mW

Max Breakdown Voltage :

25V

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 100μA 5V

Max Junction Temperature (Tj) :

150°C

Height :

1.2mm

Voltage - Collector Emitter Breakdown (Max) :

25V

Weight :

30mg

Voltage - Rated DC :

25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Min Operating Temperature :

-55°C

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 20 hours ago)

Max Operating Temperature :

150°C

hFE Min :

400

Mounting Type :

Surface Mount

Supplier Device Package :

SOT-23

REACH SVHC :

No SVHC

Transistor Type :

NPN

Length :

2.9mm

Published :

2001

Current - Collector Cutoff (Max) :

50nA ICBO

Polarity :

NPN

Gain Bandwidth Product :

50MHz

Frequency :

50MHz

Collector Base Voltage (VCBO) :

30V

Power - Max :

350mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current - Collector (Ic) (Max) :

100mA

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Voltage (VCEO) :

25V

Max Collector Current :

100mA

Number of Elements :

1

Emitter Base Voltage (VEBO) :

4.5V