MMBT5087LT3G
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- Mfr.Part #
- MMBT5087LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.05A SOT23-3
- Stock
- 115,778
- In Stock ：
- 115,778
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Voltage - Rated DC :
- -50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 3V
- Transistor Element Material :
- SILICON
- Frequency :
- 40MHz
- Number of Elements :
- 1
- Published :
- 2006
- Current Rating :
- -50mA
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Max Collector Current :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MMBT5087
- Polarity/Channel Type :
- PNP
- Additional Feature :
- LOW NOISE
- Surface Mount :
- yes
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 40MHz
- Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 250
- Collector Emitter Saturation Voltage :
- -300mV
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 50V
- Pbfree Code :
- yes
- Transition Frequency :
- 40MHz
- ECCN Code :
- EAR99
- Datasheets
- MMBT5087LT3G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5087LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -50mA.A transition frequency of 40MHz is present in the part.Collector current can be as low as 50mA volts at its maximum.
MMBT5087LT3G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT3G Applications
There are a lot of ON Semiconductor
MMBT5087LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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