MMBT4403M3T5G

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Mfr.Part #
MMBT4403M3T5G
Manufacturer
onsemi
Package / Case
SOT-723
Datasheet
Download
Description
TRANS PNP 40V 0.6A SOT723
Stock
36,188
In Stock :
36,188

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Max Collector Current :
600mA
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
JESD-609 Code :
e3
Package / Case :
SOT-723
Collector Emitter Voltage (VCEO) :
40V
Radiation Hardening :
No
Polarity/Channel Type :
PNP
Frequency :
200MHz
Operating Temperature :
-55°C~150°C TJ
Power - Max :
265mW
Collector Base Voltage (VCBO) :
40V
Power Dissipation :
640mW
Peak Reflow Temperature (Cel) :
260
Published :
2009
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Base Part Number :
MMBT4403
Number of Pins :
3
Gain Bandwidth Product :
200MHz
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
40V
Surface Mount :
yes
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Max Power Dissipation :
640mW
Factory Lead Time :
2 Weeks
Terminal Finish :
Tin (Sn)
Transistor Type :
PNP
Transition Frequency :
200MHz
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Datasheets
MMBT4403M3T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT4403M3T5G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-723, Operating Temperature:-55°C~150°C TJ, Base Part Number:MMBT4403, Number of Pins:3, Mounting Type:Surface Mount, MMBT4403M3T5G pinout, MMBT4403M3T5G datasheet PDF, MMBT4403M3T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT4403M3T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT4403M3T5G


PNP -55°C~150°C TJ 1 Elements PNP SOT-723 Tape & Reel (TR) Surface Mount

MMBT4403M3T5G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.

MMBT4403M3T5G Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


MMBT4403M3T5G Applications


There are a lot of ON Semiconductor
MMBT4403M3T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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