MMBT4401WT1G
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- Mfr.Part #
- MMBT4401WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SC70-3
- Stock
- 29,117
- In Stock ：
- 29,117
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 600mA
- Frequency :
- 250MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- hFE Min :
- 20
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2010
- Number of Pins :
- 3
- Element Configuration :
- Single
- Turn Off Time-Max (toff) :
- 255ns
- Max Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 40V
- Base Part Number :
- MMBT4401
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transition Frequency :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Max Power Dissipation :
- 150mW
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 150mW
- Lead Free :
- Lead Free
- Max Collector Current :
- 600mA
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 250MHz
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 750mV
- ECCN Code :
- EAR99
- Datasheets
- MMBT4401WT1G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT4401WT1G Overview
DC current gain in this device equals 100 @ 150mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 600mA volts.
MMBT4401WT1G Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
MMBT4401WT1G Applications
There are a lot of ON Semiconductor
MMBT4401WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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