MMBT4401M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

yes

Max Power Dissipation :

640mW

Package / Case :

SOT-723

Packaging :

Tape and Reel (TR)

Published :

2007

Collector Emitter Voltage (VCEO) :

40V

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Gain Bandwidth Product :

250MHz

Transition Frequency :

250MHz

Pbfree Code :

yes

Number of Terminations :

3

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

60V

Factory Lead Time :

2 Weeks

Number of Pins :

3

Pin Count :

3

Collector Emitter Breakdown Voltage :

40V

Max Collector Current :

600mA

Transistor Type :

NPN

Number of Elements :

1

Turn Off Time-Max (toff) :

255ns

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Terminal Form :

Flat

Element Configuration :

Single

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MMBT4401

ECCN Code :

EAR99

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 1V

Emitter Base Voltage (VEBO) :

6V

hFE Min :

20

Contact Plating :

Tin

Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

265mW

Power Dissipation :

640mW

RoHS Status :

ROHS3 Compliant