MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23-3
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 40V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Continuous Collector Current :
- 600mA
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 300mW
- Base Part Number :
- MMBT4401
- Frequency :
- 250MHz
- Length :
- 3.05mm
- Factory Lead Time :
- 19 Weeks
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 1.1mm
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Turn Off Time-Max (toff) :
- 255ns
- Max Collector Current :
- 600mA
- Gain Bandwidth Product :
- 250MHz
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 750mV
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Additional Feature :
- High Reliability
- Power Dissipation :
- 310mW
- Voltage - Rated DC :
- 40V
- Published :
- 2012
- Transition Frequency :
- 250MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Transistor Type :
- NPN
- Datasheets
- MMBT4401
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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