MMBT4401
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- Mfr.Part #
- MMBT4401
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT23
- Stock
- 175,799
- In Stock ：
- 175,799
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 250MHz
- Factory Lead Time :
- 19 Weeks
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Additional Feature :
- High Reliability
- Pbfree Code :
- yes
- Continuous Collector Current :
- 600mA
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 40V
- Turn Off Time-Max (toff) :
- 255ns
- Frequency :
- 250MHz
- Weight :
- 7.994566mg
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Height :
- 1.1mm
- Number of Elements :
- 1
- Base Part Number :
- MMBT4401
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.4mm
- Transition Frequency :
- 250MHz
- Voltage - Rated DC :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Series :
- Automotive, AEC-Q101
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- 750mV
- Power Dissipation :
- 310mW
- Max Power Dissipation :
- 300mW
- Published :
- 2012
- REACH SVHC :
- No SVHC
- Max Junction Temperature (Tj) :
- 150°C
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 600mA
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Length :
- 3.05mm
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- MMBT4401
MMBT4401 Documents
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4401-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
MMBT4401-7-F Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
MMBT4401-7-F Applications
There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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