MMBT4354
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- Mfr.Part #
- MMBT4354
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.8A SOT23-3
- Stock
- 11,091
- In Stock ：
- 11,091
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Max Collector Current :
- 800mA
- hFE Min :
- 50
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Height :
- 930μm
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- RoHS Compliant
- Published :
- 2003
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Power Dissipation :
- 350mW
- Width :
- 1.3mm
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Weight :
- 30mg
- Turn Off Time-Max (toff) :
- 400ns
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Base Part Number :
- MMBT4354
- Collector Base Voltage (VCBO) :
- -60V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -500mV
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Voltage - Rated DC :
- -60V
- Mounting Type :
- Surface Mount
- Current Rating :
- -800mA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 350mW
- Datasheets
- MMBT4354
PNP -55°C~150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4354 Overview
DC current gain in this device equals 50 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -800mA current rating.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 800mA volts.
MMBT4354 Features
the DC current gain for this device is 50 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
MMBT4354 Applications
There are a lot of ON Semiconductor
MMBT4354 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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