MMBT4126LT3G
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- Mfr.Part #
- MMBT4126LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.2A SOT23-3
- Stock
- 9,930
- In Stock ：
- 9,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 25V
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 25V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transition Frequency :
- 250MHz
- Lead Free :
- Lead Free
- Published :
- 2001
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -400mV
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Width :
- 2.64mm
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- Height :
- 1.11mm
- Max Power Dissipation :
- 225mW
- Number of Pins :
- 3
- Base Part Number :
- MMBT4126
- Max Collector Current :
- 200mA
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power - Max :
- 225mW
- Length :
- 3.04mm
- Power Dissipation :
- 300mW
- hFE Min :
- 120
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT4126LT3G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4126LT3G Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT4126LT3G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
a transition frequency of 250MHz
MMBT4126LT3G Applications
There are a lot of ON Semiconductor
MMBT4126LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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