MMBT4124LT1G
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- Mfr.Part #
- MMBT4124LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.2A SOT23-3
- Stock
- 207,617
- In Stock ：
- 207,617
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 300mV
- Transition Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Length :
- 8.89mm
- Collector Emitter Voltage (VCEO) :
- 25V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 20V
- Max Collector Current :
- 200mA
- Max Breakdown Voltage :
- 25V
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Weight :
- 4.535924g
- Current Rating :
- 200mA
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300W
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 25V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MMBT4124
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- hFE Min :
- 120
- Surface Mount :
- yes
- Height :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT4124LT1G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4124LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT4124LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMBT4124LT1G Applications
There are a lot of ON Semiconductor
MMBT4124LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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