MMBT4124LT1
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- Mfr.Part #
- MMBT4124LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN GP 20V 200MA SOT-23
- Stock
- 44,718
- In Stock ：
- 44,718
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 11 hours ago)
- Length :
- 8.89mm
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- Gain Bandwidth Product :
- 300MHz
- ECCN Code :
- EAR99
- Width :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Voltage - Rated DC :
- 20V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transition Frequency :
- 300MHz
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 225mW
- Power Dissipation :
- 300W
- Base Part Number :
- MMBT4124
- Max Collector Current :
- 200mA
- Frequency :
- 300MHz
- Surface Mount :
- yes
- Height :
- 6.35mm
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Base Voltage (VCBO) :
- 30V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Polarity/Channel Type :
- NPN
- hFE Min :
- 120
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 25V
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 25V
- Current Rating :
- 200mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Datasheets
- MMBT4124LT1
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4124LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT4124LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMBT4124LT1G Applications
There are a lot of ON Semiconductor
MMBT4124LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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