MMBT3906WT1G
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- Mfr.Part #
- MMBT3906WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SC70-3
- Stock
- 14,598
- In Stock ：
- 14,598
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Frequency :
- 250MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -200mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 40V
- hFE Min :
- 60
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 150mW
- Transition Frequency :
- 250MHz
- Voltage - Rated DC :
- -40V
- Factory Lead Time :
- 5 Weeks
- Base Part Number :
- MMBT3906
- Collector Emitter Saturation Voltage :
- -400mV
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Length :
- 2.2mm
- Number of Elements :
- 1
- Max Collector Current :
- 200mA
- Power Dissipation :
- 150mW
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Published :
- 2006
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 70ns
- Height :
- 1mm
- Collector Base Voltage (VCBO) :
- 40V
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Datasheets
- MMBT3906WT1G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MMBT3906WT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 200mA volts.
MMBT3906WT1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
MMBT3906WT1G Applications
There are a lot of ON Semiconductor
MMBT3906WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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