MMBT3906TT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-40V

Package / Case :

SC-75, SOT-416

Packaging :

Cut Tape (CT)

Collector Emitter Breakdown Voltage :

40V

Turn On Time-Max (ton) :

70ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

40V

Number of Pins :

3

Collector Base Voltage (VCBO) :

40V

Transistor Application :

AMPLIFIER

hFE Min :

60

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Current Rating :

-200mA

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Pin Count :

3

Length :

1.65mm

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Height :

800μm

Base Part Number :

MMBT3906

ECCN Code :

EAR99

Frequency :

250MHz

Terminal Position :

Dual

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Gain Bandwidth Product :

250MHz

Surface Mount :

yes

Contact Plating :

Tin

Power - Max :

200mW

Mounting Type :

Surface Mount

Max Collector Current :

200mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2006

Pbfree Code :

yes

Terminal Form :

Gull wing

Width :

900μm

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

-400mV

Power Dissipation :

300mW

Max Breakdown Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260