MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- -250mV
- Weight :
- 22mg
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 250MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Turn On Time-Max (ton) :
- 70ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Gain Bandwidth Product :
- 250MHz
- Width :
- 650μm
- Max Power Dissipation :
- 227mW
- hFE Min :
- 100
- Power Dissipation :
- 227mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Length :
- 850μm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -40V
- Package / Case :
- SOT-923F
- Number of Terminations :
- 3
- Height :
- 380μm
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- MMBT3906
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 250MHz
- Transistor Application :
- SWITCHING
- Published :
- 2012
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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