MMBT3906SL
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- Mfr.Part #
- MMBT3906SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT923F
- Stock
- 157,865
- In Stock ：
- 157,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Form :
- Flat
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 18 hours ago)
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 200mA
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Turn On Time-Max (ton) :
- 70ns
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- Base Part Number :
- MMBT3906
- Weight :
- 22mg
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -250mV
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Published :
- 2012
- Pbfree Code :
- yes
- Transition Frequency :
- 250MHz
- Max Breakdown Voltage :
- 40V
- Collector Base Voltage (VCBO) :
- -40V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 227mW
- Frequency :
- 250MHz
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- SOT-923F
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 850μm
- hFE Min :
- 100
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 227mW
- Width :
- 650μm
- Height :
- 380μm
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Datasheets
- MMBT3906SL
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP SOT-923F Tape & Reel (TR) Surface Mount
MMBT3906SL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
MMBT3906SL Applications
There are a lot of ON Semiconductor
MMBT3906SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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