MMBT3906LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

40V

hFE Min :

60

Number of Terminations :

3

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

40V

Factory Lead Time :

10 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Pin Count :

3

Collector-Base Capacitance-Max :

4.5pF

Element Configuration :

Single

Collector Base Voltage (VCBO) :

40V

Collector Emitter Saturation Voltage :

-400mV

VCEsat-Max :

0.4 V

Max Breakdown Voltage :

40V

Voltage - Rated DC :

-40V

Length :

3.04mm

Transition Frequency :

250MHz

Packaging :

Tape and Reel (TR)

Current Rating :

-200mA

Polarity/Channel Type :

PNP

Turn On Time-Max (ton) :

70ns

Max Power Dissipation :

225mW

Width :

1.4mm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Gain Bandwidth Product :

250MHz

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.01mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Max Collector Current :

200mA

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Position :

Dual

Terminal Form :

Gull wing

Base Part Number :

MMBT3906

ECCN Code :

EAR99

Surface Mount :

yes

Frequency :

250MHz

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Published :

2006

Power Dissipation :

300mW

Number of Pins :

3