MMBT3906LP-7B
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- Mfr.Part #
- MMBT3906LP-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A 3DFN
- Stock
- 7,236
- In Stock ：
- 7,236
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -200mA
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Power - Max :
- 250mW
- JESD-609 Code :
- e4
- Terminal Position :
- BOTTOM
- Frequency - Transition :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 300MHz
- Max Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Max Collector Current :
- 200mA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 40V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- VCEsat-Max :
- 0.4 V
- ECCN Code :
- EAR99
- Base Part Number :
- MMBT3906
- Turn On Time-Max (ton) :
- 70ns
- Pin Count :
- 3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- -5V
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Configuration :
- Single
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Published :
- 2012
- Collector-Base Capacitance-Max :
- 4.5pF
- Package / Case :
- 3-UFDFN
- Collector Emitter Voltage (VCEO) :
- 400mV
- Datasheets
- MMBT3906LP-7B
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UFDFN Tape & Reel (TR) Surface Mount
MMBT3906LP-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 400mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -200mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
MMBT3906LP-7B Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906LP-7B Applications
There are a lot of Diodes Incorporated
MMBT3906LP-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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