MMBT3906FA-7B
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- Mfr.Part #
- MMBT3906FA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A 3DFN
- Stock
- 7,532
- In Stock ：
- 7,532
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- Package / Case :
- 3-XFDFN
- Emitter Base Voltage (VEBO) :
- -6V
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 70ns
- Additional Feature :
- High Reliability
- Max Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- -40V
- Number of Elements :
- 1
- Base Part Number :
- MMBT3906
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Power - Max :
- 435mW
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Pins :
- 3
- Max Power Dissipation :
- 435mW
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e4
- Max Collector Current :
- 200mA
- Transition Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2013
- Series :
- Automotive, AEC-Q101
- REACH SVHC :
- No SVHC
- Datasheets
- MMBT3906FA-7B
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT3906FA-7B Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 40V volts.The maximum collector current is 200mA volts.
MMBT3906FA-7B Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
MMBT3906FA-7B Applications
There are a lot of Diodes Incorporated
MMBT3906FA-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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