MMBT3906
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- Mfr.Part #
- MMBT3906
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A SOT23
- Stock
- 3,913
- In Stock ：
- 3,913
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- Frequency - Transition :
- 300MHz
- Power - Max :
- 200mW
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 400mV
- Current - Collector Cutoff (Max) :
- 100μA
- Weight :
- 200.998119mg
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Max Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PDSO-G3
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Turn On Time-Max (ton) :
- 70ns
- Continuous Collector Current :
- -200mA
- Max Collector Current :
- 200mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Turn Off Time-Max (toff) :
- 300ns
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MMBT3906
PNP -55°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT3906-G Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A -200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
MMBT3906-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
MMBT3906-G Applications
There are a lot of Comchip Technology
MMBT3906-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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