MMBT3904SL
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- Mfr.Part #
- MMBT3904SL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT923F
- Stock
- 139,080
- In Stock ：
- 139,080
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 70ns
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Width :
- 650μm
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 40V
- Weight :
- 22mg
- Power Dissipation :
- 227mW
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 200mA
- Max Power Dissipation :
- 227mW
- Transition Frequency :
- 300MHz
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 17 hours ago)
- Package / Case :
- SOT-923F
- Height :
- 380μm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 300mV
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 300MHz
- Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 7 Weeks
- Turn Off Time-Max (toff) :
- 250ns
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 850μm
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Element Configuration :
- Single
- Base Part Number :
- MMBT3904
- hFE Min :
- 100
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Datasheets
- MMBT3904SL
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-923F Tape & Reel (TR) Surface Mount
MMBT3904SL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor
MMBT3904SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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