MMBT3904SL
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- Mfr.Part #
- MMBT3904SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT923F
- Stock
- 103,212
- In Stock ：
- 103,212
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 380μm
- Turn Off Time-Max (toff) :
- 250ns
- Terminal Form :
- Flat
- Max Collector Current :
- 200mA
- Lead Free :
- Lead Free
- Frequency :
- 300MHz
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Base Part Number :
- MMBT3904
- Power Dissipation :
- 227mW
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 300MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 17 hours ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Width :
- 650μm
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Length :
- 850μm
- Package / Case :
- SOT-923F
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Transistor Type :
- NPN
- Published :
- 2008
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 300mV
- Turn On Time-Max (ton) :
- 70ns
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 227mW
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 40V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 7 Weeks
- Gain Bandwidth Product :
- 300MHz
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 100
- Weight :
- 22mg
- Datasheets
- MMBT3904SL
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-923F Tape & Reel (TR) Surface Mount
MMBT3904SL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor
MMBT3904SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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