MMBT3904SL
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- Mfr.Part #
- MMBT3904SL
- Manufacturer
- onsemi
- Package / Case
- SOT-923F
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT923F
- Stock
- 103,212
- In Stock ：
- 103,212
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Factory Lead Time :
- 7 Weeks
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Turn On Time-Max (ton) :
- 70ns
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Base Part Number :
- MMBT3904
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 227mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 227mW
- Package / Case :
- SOT-923F
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 40V
- hFE Min :
- 100
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 200mA
- Collector Emitter Saturation Voltage :
- 300mV
- Contact Plating :
- Tin
- Published :
- 2008
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Width :
- 650μm
- Frequency :
- 300MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Transition Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 380μm
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Weight :
- 22mg
- Length :
- 850μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 17 hours ago)
- Turn Off Time-Max (toff) :
- 250ns
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Datasheets
- MMBT3904SL
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN SOT-923F Tape & Reel (TR) Surface Mount
MMBT3904SL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
MMBT3904SL Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904SL Applications
There are a lot of ON Semiconductor
MMBT3904SL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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