MMBT3904LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Transistor Type :

NPN

REACH SVHC :

No SVHC

Radiation Hardening :

No

Current Rating :

200mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.11mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Collector Emitter Saturation Voltage :

200mV

Contact Plating :

Tin

Type :

GENERAL PURPOSE

Number of Elements :

1

Number of Pins :

3

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

300MHz

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

60V

Turn On Time-Max (ton) :

70ns

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Voltage - Rated DC :

40V

Transistor Element Material :

SILICON

Length :

2.9mm

Collector Emitter Breakdown Voltage :

40V

Width :

1.3mm

Max Power Dissipation :

300mW

Turn Off Time-Max (toff) :

250ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Frequency :

300MHz

Gain Bandwidth Product :

300MHz

hFE Min :

100

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

MMBT3904

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Lead Free :

Lead Free

Surface Mount :

yes

Max Collector Current :

200mA

Pin Count :

3

Terminal Position :

Dual

Factory Lead Time :

10 Weeks

Collector Emitter Voltage (VCEO) :

40V

Pbfree Code :

yes

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

6V

Power Dissipation :

225mW