MMBT3904LP-7
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- Mfr.Part #
- MMBT3904LP-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A 3DFN
- Stock
- 128,744
- In Stock ：
- 128,744
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e4
- Additional Feature :
- High Reliability
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Turn On Time-Max (ton) :
- 70ns
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- 300mV
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- 3-UFDFN
- Series :
- Automotive, AEC-Q101
- Turn Off Time-Max (toff) :
- 250ns
- Collector-Base Capacitance-Max :
- 4pF
- Base Part Number :
- MMBT3904
- Factory Lead Time :
- 14 Weeks
- Length :
- 1mm
- Max Collector Current :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Gain Bandwidth Product :
- 300MHz
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 200mA
- Weight :
- 7.994566mg
- Number of Pins :
- 3
- Max Power Dissipation :
- 250mW
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Height :
- 500μm
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 600μm
- Mount :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Published :
- 2009
- Datasheets
- MMBT3904LP-7
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
MMBT3904LP-7 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 300MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904LP-7 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904LP-7 Applications
There are a lot of Diodes Incorporated
MMBT3904LP-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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