MMBT3904FA-7B
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- Mfr.Part #
- MMBT3904FA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A 3DFN
- Stock
- 2,814
- In Stock ：
- 2,814
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 200mA
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 300mV
- Turn Off Time-Max (toff) :
- 250ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Base Part Number :
- MMBT3904
- Max Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 435mW
- JESD-30 Code :
- R-PSSO-N2
- Number of Terminations :
- 2
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 435mW
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e4
- Frequency :
- 300MHz
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Published :
- 2013
- Collector Emitter Voltage (VCEO) :
- 40V
- Turn On Time-Max (ton) :
- 70ns
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 300MHz
- Series :
- Automotive, AEC-Q101
- Package / Case :
- 3-XFDFN
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Transition Frequency :
- 300MHz
- Max Collector Current :
- 200mA
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- MMBT3904FA-7B
NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
MMBT3904FA-7B Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MMBT3904FA-7B Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904FA-7B Applications
There are a lot of Diodes Incorporated
MMBT3904FA-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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